Effects of growth conditions on the quality of B-doped graphene films

Boron-doped graphene (B-doped graphene) films with large area, high quality, and good uniformity are successfully prepared by chemical vapor deposition using ethylboronic acid (C 2 H 7 BO 2 ) as the sole precursor. The pre-treatment of the copper foil and post-annealing are introduced to the growth process and proved to be greatly influential to the quality of B-doped graphene. The films prepared are mainly monolayer with the transmittance of about 97.1%, the B/C ratio of about 2.3%, the sheet resistance of 1.5–3 kΩ/◻, and the carrier density of 1.13 × 10 13  cm −2 at room temperature.