Dielectric Properties of Mg2TiO4-Doped Ca0.65Sr0.35Zr0.65Ti0.35O3 with High Withstand Voltage and Low Loss

Mg2TiO4-doped Ca0.65Sr0.35Zr0.65Ti0.35O3(CSZT) thin films with different Mg2TiO4concentrations were deposited on the LaNiO3(LNO)/p-Si substrate using radio-frequency magnetron sputtering technology. The dielectric response of the prepared x% Mg2TiO4-CSZT thin films with frequency, voltage, and temperature was systematically studied. The tanδ and leakage current density of CSZT thin films were reduced effectively by introducing Mg2TiO4content. The prepared 6% Mg2TiO4-CSZT thin film, due to its low loss (tanδ ~0.01 at 1 MHz), satisfied temperature stability (TCC ~−68 ppm/°C, from −55 °C to 205 °C), high withstand voltage (>160 V), and small leakage current density (about 3.34 × 10−6A/cm2at operating voltage of 160 V). This may be useful for capacitor materials in the next generation of portable electronic systems.Keywords:linear dielectric thin films;RF magnetron sputtering