Self-powered photodetector based on a CsPbBr3/n-Si Schottky junction

Self-powered photodetectors (SPPDs) are attracting considerable publicity due to their superiority over conventional photodetectors (PDs) in terms of high sensitivity, fast response, and no need for an external power supply. Halide perovskites are much anticipated in SPPDs for their unusual photoelectronic properties. This work developed a Schottky junction ${{\rm CsPbBr}_3}/{\rm n} \text{-} {\rm Si}$ SPPD by growing stable all-inorganic ${{\rm CsPbBr}_3}$ microcrystals on an n-Si substrate using a solution method. At zero bias, such Schottky SPPD has a very weak dark current (0.3 pA), a wide linear dynamic range (LDR, 110 dB), a sizeable on–off ratio (${\gt}{{10}^3}$), and high detectivity (${1.05} \times {{10}^{11}}\;{\rm Jones}$). Through the research of this project, it is expected to obtain a way to prepare Schottky photodiodes with high stability and self-driving capability.