摘要
Field-effect transistors (FET) using low-dimensional materials has attracted attention for detection of DNA hybridization. Here, we proposed a photocurrent-modulated FET sensor, where the I p h o t o c u r r e n t ( g a t e ) + I p h o t o c u r r e n t ( D N A ) dramatically enhance the response signal, I c u r r e n t , compared to a traditional FET sensor. The proposed sensor successfully detects DNA signals with a limit of detection (LOD) down to attomolar concentrations that is nearly 100x lower than a traditional FET sensor. The sensing mechanism is postulated and discussed. The results suggest that photo-coupled modulation opens new avenues for further development of the FET in biosensing applications.
危险品化学品经营许可证(带存储)