Revealing the influence of aerosol particle state on the high-quality α-Ga2O3 single crystal thin film growth by Mist CVD epitaxy

There is little research on α-Ga 2 O 3 single crystal film because it is a metastable phase of Ga 2 O 3 crystal and difficult for controllable fabrication. In this paper, highly crystallized Ga 2 O 3 thin films of poly-crystalline, α-Ga 2 O 3 and β-Ga 2 O 3 were prepared by modulating the growth temperature from 400 °C to 700 °C by mist-assisted CVD (Mist CVD) method. The results show that films grown at 525 °C owes the best crystalline quality of α-Ga 2 O 3 film. To further improve the crystallinity of α-Ga 2 O 3 thin film, a systematic simulation revealing the distribution changes of aerosol particle size, flow field, and temperature gradient in the reaction chamber were explored. The optimal growth region C with uniform particle size, well-distribute temperature gradient and stable flow field is determined. Meanwhile, the experimental results of α-Ga 2 O 3 thin films grown at different positions in the reaction chamber was proved to consistent with the simulation results. Furthermore, the optimal single crystallized α-Ga 2 O 3 thin films with smooth surface morphology and optical property were obtained. The PL spectrum operated at room temperature show the α-Ga 2 O 3 film with low defect density and high crystalline quality. It shows that the single crystallized α-Ga 2 O 3 is orientated grown on sapphire substrate with epitaxial relationship of α-Ga 2 O 3 (0006)//c-Al 2 O 3 (0006). Although, slight lattice mismatch is observed on the selected area electron diffraction pattern of the interface between sapphire and α-Ga 2 O 3 film, it is ideal for further application in devices. This work reveals the key point for α-Ga 2 O 3 single crystal film growth by mist CVD is to construct a steady and orderly environment through controlling aerosol particle state.