摘要
GeSe is a narrow band gap semiconductor with feasible application as infrared photoelectric devices . However, challenges are still maintained to improve their carrier concentration and conductivity for broader scope of photodetector applications. Aiming at such scope, the Ge 1- x Sn x Se (0 < x < 0.2) were synthesized via a facile “one-pot” wet chemical method and a lattice site substitution strategy. Compared to the pure GeSe micro-sheets the synthesized Ge 1- x Sn x Se micro-sheets possessed a smaller band gap (0.914 eV) and a better electrical conductivity (2.80 × 10 −5 Ω −1 cm −1 ), where the former exhibit greatly improved photo-current. The Ge 1- x Sn x Se micro-sheet was then assembled into a photodetector device to demonstrate its remarkable photo responsivities in visible to NIR spectral region (3614 A/W at 532 nm and 86 A/W at 1319 nm). The photo-detection range broadening and the responsivity enhancement can be attributed the carrier concentration increment as well as the band gap narrowing. Therefore, the Ge 1- x Sn x Se micro-sheets can be considered as an excellent candidate that can be applied as high performance photodetectors in the visible to near infrared region.
危险品化学品经营许可证（带存储）