Ti doped SiOC precursor to activate gyroid sensing structures

Ti-doped polymer-derived SiOC ceramic has multi-functional sensing capability due to its semiconductive properties. Their mechanical and chemical stability provide reliable support for their long-term service and safe operation in extreme environments. The sensing properties of Ti-doped SiOC (SiTiOC) can be optimized by modulation carrier concentration. Meanwhile, it can be fabricated by 3D printing as structural-strengthened components, promising for abnormal environmental signals warning under harsh conditions. In this work, SiTiOC gyroid structures were constructed by vat photopolymerization. The resulting components had thermistor characteristics with a negative temperature coefficient . After the Ti doping, the structures exhibited a high conductivity of 1.10 S/m, as the Ti ions formed an efficient percolation network by introducing acceptor impurities. The structures also had piezoresistive capability as the conductive phases can generate a tunneling-percolation conduction effect. They can detect a strain of less than 0.5%. Furthermore, the structures can realize n-butanol sensing for their p-type semiconductor properties . The components also had an excellent mechanical performance with the compressive strength and Young's modulus of 92.83 MPa and 4.28 GPa, respectively, ensuring reliable service under pressure loading.