Chemical and interfacial design in the visible-light-absorbing ferroelectric thin films

Ferroelectric thin films with switchable polarization and anomalous photoelectric effects have received extensive attention recently. However, the improvement of photoelectric performance is accompanied by the weakening of ferroelectricity . Here, both chemical and interlayer design are used to regulate the polarization and optical properties of BiFeO 3 -based ferroelectric films. We achieved an improvement in both ferroelectricity and bandgap by chemical composition. The remanent polarization has been enhanced to 73.8 μC/cm 2 from 0.2 μC/cm 2 , ascribed to the structural transition. The band gap of Eu-BiFeO 3 films has been reduced to 2.23 eV from 2.42 eV due to the unique energy level from Eu 4 f , indicating the enhanced visible-light-absorbing capability. We have designed a "sandwich" interfacial structure of homogeneous Eu-BiFeO 3 films. A clever combination between optimal ferroelectricity and narrow band gap with near Eu contents of BFO films would generate an interfacial layer with a homogeneous gradient component, which should favor the switching of ferroelectric domains. The results show that the remanent polarization improved by 17 % to 86.2 μC/cm 2 while the band gap has also improved. Intriguingly, the short-circuit current density ( J sc ) and open circuit ( V oc ) of the photovoltaic signal of the optimal films are 89.0 nA and 0.412 V, respectively. This provides a simple and intelligent way to design the ferroelectric-photoelectric thin films and lays the foundation for optical information storage devices.