Exceptional high temperature interface chemistry: A creation of P-Sn bonds and enhanced photoreduction ability

The interface of substances at high temperature is completely different from that at room temperature, which gives a chance to create some unprecedented physical and chemical properties. These interface-dominated properties can significantly improve the carrier transport kinetics. In this paper, we report on the synthesis of heterogeneous catalysts involving P doped g-C 3 N 4 and SnO 2 , providing a first example of using high temperature interfacial chemistry to create P-Sn bonds between thermo-soften two-dimensional substance and hard oxide. Nuclear magnetic resonance (NMR) and X-ray photoelectron spectroscopy (XPS) data confirmed the presence of P-Sn bonds in the heterogeneous catalysts of P doped g-C 3 N 4 and SnO 2 during the rapid thermal quenching process. Owing to the promoted fast separation of photogenerated carriers, P-Sn bond enriched catalyst exhibits the best Cr(VI) photoreduction performance among the g-C 3 N 4 -based photocatalysts ever reported. Even at high Cr(VI) concentrations (at 500 ppm), this catalyst retains a high catalytic activity as well as good stability. High temperature interface chemistry produced by thermal quenching process will provide a universal methodology for constructing interfacial bonds and guiding the synthesis of new interfacial functional materials.