摘要
TiO 2 ceramics co-doped with In and Nb exhibit unusual large dielectric-permittivity phenomena, but their sintering temperature is essentially higher than 1400 °C and the holding time is usually longer than 5 h, which is very uneconomical for industrial production and practical applications. Therefore, to maintain the relatively good dielectric properties of In and Nb co-doped TiO 2 ceramics and reduce the sintering temperature to about 1300 °C, B 2 O 3 , was added as a sintering aid to prepare B 2 O 3 /(In 0.5 Nb 0.5 ) 0.05 Ti 0.95 O 2 ceramics in this paper. The crystalline structures, microstructures, and electrical properties were investigated and discussed. The results showed that the sintering temperature of B 2 O 3 /(In 0.5 Nb 0.5 ) 0.05 Ti 0.95 O 2 ceramics indeed prominently decreased, but their dielectric loss was relatively large, possibly caused by the pores left following B 2 O 3 volatilization.
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