摘要
Inorganic perovskite absorbers are promising candidates for next-generation photovoltaics due to their good thermal and light stabilities. Halide-mixed CsPbI x Br 3 − x reach a compromise between its structural tolerance and absorption edge, yet the power conversion efficiencies (PCEs) of the asfabricated cells can be considerably limited by the nonideal quality of solution-processed films. Here we demonstrated a fumigation strategy on colloidal perovskite films using dual- O -donor ethyl acetate (EA). By in-situ monitoring this stage with grazing-incidence wide-angle X-ray scattering technology, we reveal that EA fumigation would impose ripening barrier on colloidal inorganic perovskites and hence slow down the nucleation rate, leading to an intermediate state for processing high-crystallinity and oriented perovskite films with improved photophysical properties. An optimized PCE of 16.6% was finally yielded upon wide-bandgap (1.9 eV) perovskite absorber.
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