Morphological evolution of MoxW1−xS2/MoS2 heterostructures modulated with a growth dynamic process by one-step chemical vapor deposition

Two-dimensional transition metal dichalcogenide heterostructures are potential candidates for next-generation semiconductor materials due to their extremely thin atomic structure and better optoelectronic properties. As a common method for growing heterostructures, chemical vapor deposition (CVD) can synthesize both lateral and vertical heterostructures. However, the controlled synthesis of heterostructures still faces challenges due to fewer studies about the evolution of heterostructure morphology under different conditions. In this study, heterostructures with sharp interfaces are fabricated via the vapor–liquid–solid (VLS) growth-based CVD technique using mixed sodium molybdate and sodium tungstate solutions. By optimizing a series of growth parameters, the modulation of MoxW1−xS2/MoS2 heterostructure morphology is achieved. In addition, lateral and vertical MoxW1−xS2/MoS2 heterostructures are synthesized by changing the molybdenum–tungsten molar ratio. This study provides a new strategy for synthesizing heterostructures with different growth ways.