Broadband near-infrared luminescence in spinel Zn4InSbO8:Cr3+ phosphor for light-emitting diodes application

Near-infrared (NIR) phosphor-converted light-emitting diode (pc-LED) has been considered as a smart light source for NIR spectroscopy applications, leading to a growing need of developing broadband NIR phosphors. Herein, a new composition Zn 4 InSbO 8 :Cr 3+ phosphor with classical spinel-type structure was synthesized, which emits a broadband NIR light covering a region of 700–1200 nm with a peak centered at 860 nm under 460 nm excitation. The sample with an optimized Cr 3+ concentration possesses a full width at half maximum (FWHM) as broad as 180 nm mainly ascribing to multi crystallographic sites occupation. Moreover, the absorption efficiency (AE), internal quantum efficiency (IQE) and thermal stability were investigated to estimate the practicality. The relatively long-wavelength NIR emission produced by Cr 3+ in this spinel make it suitable for multi-functional applications. Finally, the asprepared phosphor combining with blue LED chip is used to fabricate a prototype NIR pc-LED, giving a NIR output power of 4.8 mW under 100 mA forward bias current with a photoelectric efficiency of 1.63%, showcasing the potential use of this material as a luminescent converter in the application of NIR pc-LEDs.