High-k erbium oxide film prepared by sol-gel method for low-voltage thin-film transistor

In this work, high-dielectric-constant (high-k) erbium oxide（Er2O3）film is fabricated using the spin coating method, and annealed at a series of temperatures (from 400 °C to 700 °C). The effect of annealing temperature on the microstructural and electrical properties of Er2O3 nanofilm is investigated. To demonstrate the applicability of the Er2O3 film, the indium oxide (In2O3) thin film transistor (TFT)-based amorphous Er2O3 dielectric film is fabricated at different temperatures. The TFT-based EO-600 shows a low-operating voltage and good electrical properties. The inverter demonstrates that the Er2O3 nanofilm synthesized by the sol-gel method could be a promising candidate as the dielectric layer in a low-voltage electronic device.