Influence of TiO2 additive on sintering temperature and microwave dielectric properties of Mg0.90Ni0.1SiO3 ceramics

(1- x )Mg 0.90 Ni 0.1 SiO 3 - x TiO 2 ( x   =   0, 0.01, 0.03, 0.05) ceramics were successfully formed by the conventional solid-state methods and characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS), and their microstructure and microwave dielectric properties systematically investigated. It was observed that when TiO 2 content increased from 0 to 5   wt%, the Q u f o of the sample decreased from 118,702   GHz to 101,307   GHz and increases the τ f value from −10   ppm/°C to +3.14   ppm/°C accompanied by a notable lowering in the sintering temperature (125   °C). A good combination of microwave dielectric properties (ε r   ∼   8.29, Q u f o   ∼   101,307   GHz and τ f   ∼   −2.98   ppm/°C) were achieved for Mg 0.90 Ni 0.1 SiO 3 containing 3   wt% of TiO 2 sintered at 1300   °C for 9   h which make this material of possible interest for millimeter wave applications.