Highly ordered arrays and characterization of WS2 flakes grown by low pressure chemical vapour deposition

Highly ordered arrays of WS 2 crystals are grown on the SiO 2 /Si substrate using Pt/Ti metal as seed materials by a low pressure chemical vapor deposition method. High magnification SEM images and Raman spectrum reveal that the WS 2 flakes are induced and grown around the Pt/Ti metal, and the diameter of a single unit is up to 100 μm, which have contribute to the direct construction of functional devices on the substrate. HRTEM measurements further confirm that the obtained flakes are the WS 2 crystal with good crystallinity. The results show that highly ordered arrays of WS 2 crystals will have potential applications in electronic and optoelectronic devices.