摘要
Environmentally benign and potentially cost-effective Sb 2 Se 3 solar cells have drawn much attention by continuously achieving new efficiency records. This article reports a compatible strategy to enhance the efficiency of planar n–i–p Sb 2 Se 3 solar cells through Sb 2 Se 3 surface modification and an architecture with oriented 1D van der Waals material, trigonal selenium (t-Se). A seed layer assisted successive close spaced sublimation (CSS) is developed to fabricate highly crystalline Sb 2 Se 3 absorbers. It is found that the Sb 2 Se 3 absorber exhibits a Se-deficient surface and negative surface band bending. Reactive Se is innovatively introduced to compensate the surface Se deficiency and form an (101) oriented 1D t-Se interlayer. The p-type t-Se layer promotes a favored band alignment and band bending at the Sb 2 Se 3 /t-Se interface, and functionally works as a surface passivation and hole transport material, which significantly suppresses interface recombination and enhances carrier extraction efficiency. An efficiency of 7.45% is obtained in a planar Sb 2 Se 3 solar cell in superstrate n–i–p configuration, which is the highest efficiency for planar Sb 2 Se 3 solar cells prepared by CSS. The all-inorganic Sb 2 Se 3 solar cell with t-Se shows superb stability, retaining ≈98% of the initial efficiency after 40 days storage in open air without encapsulation.
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