High performance UV–vis–NIR photodetectors based on ZnO/organic–inorganic Sn–Pb hybrid perovskite heterojunction

The recent trend of combining perovskite with other materials to enhance optoelectronic performance has garnered significant interest. In this paper, MAPb 0.9 Sn 0.1 I 3 and ZnO–MAPb 0.9 Sn 0.1 I 3 photodetector were prepared by frequency magnetron sputtering and sol–gel spin-coating method. Hybrid heterojunction photodetectors have more beneficial optoelectronic performance compared to MAPb 0.9 Sn 0.1 I 3 photodetector, due to the presence of built-in electric fields, which can suppress the recombination of electrons and holes. At 7 V bias conditions, the responsivities of MAPb 0.9 Sn 0.1 I 3 photodetector were 0.022 and 0.015 A/W, and the responsivities of ZnO–MAPb 0.9 Sn 0.1 I 3 photodetector were 0.39 and 0.99 A/W obtained under 350 and 850 nm illumination, respectively. The maximum external quantum efficiency reaches 144.47%, the detection rate was 5.53 × 10 11 Jones and the light to dark ratio was 2.95 × 10 3 of ZnO–MAPb 0.9 Sn 0.1 I 3 photodetector. This study provides a basis for the preparation of perovskite heterojunction photodetectors with high optoelectronic performance. High performance UV–vis–NIR photodetectors based on ZnO/organic–inorganic hybrid Sn–Pb hybrid perovskite heterojunction.