摘要
Three-dimensional ordered macroporous (3DOM) CuIn x Ga 1−x Se 2 (CIGS) film is synthesized by one-step galvanostatic electrodeposition based on polystyrene templates from a special mixture of ionic liquid 1-butyl-3-methylimidazolium tetra-fluoroborate and ethanol. X-ray diffraction pattern , Raman spectroscopy and transmission electron microscopy present the CIGS film has ideal chalcopyrite crystallization. 3DOM CIGS film with high Ga content has photochemical activity and good photo-stability, its band gap is 1.34 eV. This is a simple, feasible and additive free method without selenization process to synthesize 3DOM CIGS film, the film is qualified and available for absorber-layer fabrication or other fields.
危险品化学品经营许可证(带存储)