Controlled synthesis and near-infrared optoelectronic properties of multilayer Bi2O2Se nanosheets

As an emerging ultrathin semiconductor material, Bi 2 O 2 Se has shown outstanding performance in fields of electronics, optoelectronics and ultrafast optics. High performance Bi 2 O 2 Se nanosheets were desperately needed for further foundational research and practical applications. However, their synthesis has not yet been completely developed. In this paper, high quality Bi 2 O 2 Se nanosheets were efficiently obtained by sdjusting synthesis pressure. The uniform nucleation of Bi 2 O 2 Se nanosheets on substrates was achieved, put forward the nucleation mechanism of Bi 2 O 2 Se nanosheets. The near-infrared (NIR) optoelectronic properties of multilayer Bi 2 O 2 Se nanosheets were systematically investigated. Photodetectors were constructed based on Bi 2 O 2 Se nanosheets of different thicknesses and the near-infrared (NIR) photoelectric properties of Bi 2 O 2 Se-based photodetectors with the highest responsivity were systematically investigated. The multilayer Bi 2 O 2 Se nanosheets exhibit sensitive responsivity to the NIR, including high responsivity (∼825 A/W), high external quantum efficiency (∼1.25 × 10 5 %) and high detectivity (6 × 10 10 Jones). These results suggest that devices based on multilayer Bi 2 O 2 Se nanosheets may have great potential for future applications in ultrafast, high-sensitivity NIR optoelectronic devices.