Batch production of centimeter-scale monolayer MoS2 with low nucleation by face-to-face metal precursor supply

Transition-metal dichalcogenides (TMDs) show great potential for next-generation semiconductor due to its atomic level thickness, tunable band gap and high carrier mobility. However, high-quality monolayer MoS 2 (ML-MoS 2 ) films require stringent growth conditions during preparation. Here, we report a face-to-face metal precursor supply approach during chemical vapor deposition (CVD) to batch production of uniform ML-MoS 2 films. Mo foils provide a stable concentration of metal precursors leading to uniform film generation with low nucleation. Comprehensive characterization techniques, including spectroscopic, surface topography and atomic scale analysis confirm the centimeter-scale homogeneity and high crystallographic quality of the monolayer films. Back-gate field effect transistors (FET) fabricated by ML-MoS 2 exhibit excellent electrical performance. This methodology provides a pathway for the growth of TMDs, which should promote their applications in high-performance electronics or other fields.