Electric properties and effect on temperature dependence of 5mol% BiScO3-doped 0.05Pb(Mn1/3Sb2/3)O3–Pb(Zr1−xTix)O3

Temperature stability of the piezoelectric ceramics is critical to its performance in high-power devices. In this research, 5 mol% BiScO 3 (BS) is introduced into 0.05Pb(Mn 1/3 Sb 2/3 )O 3 –Pb(Zr 1− x Ti x )O 3 system. The morphotropic phase boundary (MPB) has been re-located by shifting Zr/Ti ratio systematically for the piezoceramic. Optimal piezoelectric properties with piezoelectric coefficient d 33 of 341 pC/N, electromechanical coupling factor ( k p ) of 0.51, and mechanical quality factor Q m value of 859 are obtained in MPB compositions of 0.05BiScO 3 –0.05Pb(Mn 1/3 Sb 2/3 )O 3 –0.9Pb(Zr 45.5 Ti 54.5 )O 3 ceramic at room temperature. Furthermore, the addition of BiScO 3 effects profoundly on the temperature dependence of the piezoelectric and ferroelectric properties. Comparing to common Pb(Zr, Ti)O 3 -based piezoceramic, the BS-doped ceramic presents elevating ferroelectric polarization with temperature up to 200 °C, as well as stabilized d 33 , k p , and Q m values from room temperature to 120 °C.