摘要
In this work, Pt single atoms (SAs) were engineered on the surface of CdIn 2 S 4 (CIS) to trigger abundant generation and stable existence of sulfur vacancies (S v ). Through quasi in situ X-ray photoelectron spectroscopy (XPS) and work function analysis, the photogenerated electrons are first captured by Pt SAs and S v , and then transferred from Pt SAs to S v , ultimately increasing the electron density of S v . Meanwhile, S v have significant advantages in adsorbing CO 2 molecules. According to the number of transferred electrons, the optimized 0.8 %Pt/CIS has 76 times the photocatalytic performance of pristine CIS, and the selectivity of ethylene (C 2 H 4 ) is up to 99.3 %. The carbon–carbon coupling reaction between *CO and *CHO adsorbed on double sites of S v and In atoms is identified as the rate-determining step. Theoretical calculations suggest that the energy barrier required for coupling of intermediates *CO and *CHO is the lowest, conducive to the selective generation of C 2 H 4 .
危险品化学品经营许可证(带存储)