Field-Effect Transistors Based on Welded SnGaO Nanowire Networks

One-dimensional metal-oxide nanowire networks (NNs) are considered as important elements in electronics due to their unique physical and electrical performances. In this letter, Sn_1-x Ga_x O NNs were fabricated and field-effect transistors (FETs) based on Sn_1-x Ga_x O NNs with different Sn/Ga ratios were constructed. The characteristics of the FETs have been systematically investigated. In order to promote the adhesion and electrical performance of nanowires, Sn_1-x Ga_x O NNs were welded by introducing the polymer mixture containing poly vinyl pyrrolidone and poly methyl methacrylate. Utilizing a welding process, the transport properties of Sn_1-x Ga_x O NNs have been greatly promoted, and the FETs based on Sn_0.8 Ga_0.2 O NNs exhibit optimum electrical performance. Once integrated with high-k ZrOx dielectric, the FET based on Sn_0.8 Ga_0.2 O NNs/ZrOx exhibits high stability and high electrical performance, including aμFE of 5.2 cm² /V s, an I_on/I_off of 1.5×10⁶, a subthreshold voltage of 170 mV/decade, an on voltage of -0.25 V, and a negligible hysteresis of ~0.12 V. The successful fabrication of the FETs based on Sn_0.8 Ga_0.2 O NNs lays the foundation for the development of low-consumption, low-cost and high-performance electronic devices.