Solution-processed Sb2-xBixS3 thick junctions for stable, low-noise, and sensitive X-ray detection

Solution-processed semiconductors have emerged as promising candidates for next-generation X-ray detectors, benefiting from their facile processing and tunable optoelectronic properties. However, the fabrication of thick junctions (>1 μm) is limited by poor stability and insufficient charge transport. To fill this gap, we report a sol-gel method to fabricate thick junctions based on Sb 2-x Bi x S 3 precursors. The charge carrier dynamics of antimony bismuth sulfide films were evaluated by multiple transient and steady-state techniques. It was found that Bi can modulate film morphology and thick film formation, and it also has an impact on boosting the charge transport properties. After optimization, low dark current, ultra-fast response, decent X-ray sensitivity, and high spatial resolution were achieved. The Sb 2-x Bi x S 3 -based thick junctions are stable under large bias voltage, high irradiance, and high temperature even underwater, indicating the potential for X-ray detection and imaging.