Realization of grain growth and suppressed bulk defects for efficient solution-processed Cu2ZnSn (S, Se)4 solar cells via co-doping strategy

Environmentally benign and earth-abundant constituent’s kieserite Cu 2 ZnSn (S, Se) 4 (Cotises) is considered as a hopeful photovoltaic material. Unfortunately, the severe tail state caused by various harmful deep defects in CZTSSe absorber prevents further development of its device efficiency. Here, we report firstly that the Co was incorporated into CZTSSe films to form the Cu 2 Co x Zn 1-x Sn (S, Se) 4 (CCZTSSe) films using a two-step annealing and solution-processing technique method. Through optimized the Co/(Co+Zn) ratio, the CCZTSSe film has excellent good surface morphology and single-phase composition. Appropriate amount of Co elements replacing Zn elements in CZTSSe films can effectively reduce the degree of Cu-Zn disorder, thus inhibiting [2Cu Zn +Sn Zn ] defect clusters and Cu Zn defects. The detrimental deep defects located in the film were effectively passivated to reduce electrostatic potential fluctuations, resulting in relief of the trailing state. Therefore, a champion device having an efficiency of 7.50 % with a fill factor (FF) of 61.00 % was achieved from CCZTSSe with 3 % Co content. This work provides new insights into the impacts of Co doping in CZTSSe by a solution processed method and offers a deeper comprehension of the origin of the efficiency enhancement of CCZTSSe devices.