Study on photoelectric properties of manganese-doped MoS2 thin films

This paper investigates the microstructure, morphology and optical properties of manganese (Mn)-doped molybdenum disulfide (MoS 2 ) films with a triangular shape fabricated by the chemical vapor deposition method. X-ray diffraction and X-ray photoelectron spectroscopy show that the Mn element is successfully doped into MoS 2 film. Mn doping results in a shift in the absorption spectrum because of the changes in the band structure of the doped films. I – V curves indicate about a 50% reduction in the photocurrent onset voltage for the Mn-MoS 2 film under different light intensities. The results demonstrate that Mn doping improves the electronic structure of MoS 2 film, which is of significant importance for applications in optoelectronic sensing and photocatalysis.