摘要
Polycrystalline Bi2Se3−xTex(x = 0~1.5) samples were prepared by self-propagating high-temperature synthesis (SHS) combined with spark plasma sintering (SPS) and their thermoelectric properties were investigated. The SHS-SPS process can shorten the time with few energy consumptions, and obtain almost pure Bi2Se3-based phases. Consequently, the Se vacancies and anti-site defects contribute to the converged carrier concentration of ~2 × 1019cm−3while the increased carrier effective mass enhances the Seebeck coefficient to more than −158 μV K−1over the entire temperature range. The lattice thermal conductivity is suppressed from 1.07 Wm−1K−1for the pristine specimen to ~0.6 Wm−1K−1for Te-substitution samples at 300 K because of point defects caused by the difference of mass and size between Te and Se atoms. Coupled with the enhanced power factor and reduced lattice thermal conductivity, a highZTof 0.67 can be obtained at 473 K for the Bi2Se1.5Te1.5sample. Our results reveal that Te-substitution based on the SHS-SPS method is highly-efficient and can improve the thermoelectric properties of Bi2Se3-based materials largely.
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