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Thermoelectric performance of Cu3InSnSe5 and MnSe pseudo-binary solid solution

Journal 2024 · IF 0 · 发表于 2024 年 11 月 7 日
作者: Guanzheng Luo,Wang Li,Yingchao Wei,Yao Dai,Wenjie Shu,Linyao Wu,Xin Li,Yubo Luo,Junyou Yang
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摘要

Cu 3 InSnSe 5 is a newly discovered copper-based diamond-like thermoelectric semiconductor, whose thermoelectric performance can be further enhanced by the MnSe alloying herein. We observed the formation of MnSe 2 precipitates that effectively scattered low-frequency phonons, which significantly reduced the lattice thermal conductivity at mid-to-low temperatures. While a high amount of MnSe alloying led to the formation of MnSe 2 precipitates which enhanced the phonons scattering, a smaller MnSe content improved the power factor in a certain as well. Ultimately, our research achieved a peak ZT of 1.00 and an average ZT of 0.50 over the 300–773 K temperature range by 10 mol.% MnSe alloyed Cu 3 InSnSe 5 pseudo-binary solid solution, demonstrating the potential of MnSe alloying for optimizing the thermoelectric performance of copper-based diamond-like semiconductor materials.