Zero-thermal-quenching broadband yellow-emitting Bi3+-activated phosphors based on metal to metal charge transfer

Bi 3+ -activated phosphors have been proven to have potential applications foreground in white light-emitting diodes (WLED), plant growth lamps and temperature sensing. Therefore, it is urgent to exploit high-efficiency Bi 3+ -activated phosphors. Herein, a novel broadband yellow-emitting phosphor Ba 2 GdGaO 5 :Bi 3+ with high internal quantum efficiency (IQE = 77%) was obtained based on metal to metal charge transfer (MMCT) between Bi 3+ ground state and Gd 3+ excited states. The photoluminescence excitation (PLE) spectrum and photoluminescence (PL) spectrum range from 225 nm to 400 nm and 400 nm to 700 nm, respectively, which can avoid the reabsorption phenomenon efficiently. Besides, Ba 2 GdGaO 5 :Bi 3+ has superior thermal stability and it shows zero-thermal-quenching at 150 °C. The K + doping hardly changes the thermal stability and can improve the PL intensity to 133.1% when the K + concentration is 2%. Finally, a phosphor-convert WLED (pc-WLED) was simply synthesized by Ba 2 GdGaO 5 :Bi 3+ and BaMgAl 10 O 17 :Eu 2+ (BAM:Eu 2+ ) phosphors. The doping of Eu 3+ can significantly enhance the color rendering index (CRI, from 88.1 to 91.5) and reduce the correlated color temperature (CCT, from 4911 K to 4014 K). The above experimental results demonstrated that the phosphor has great application prospect in WLED.