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Reduction of Die-Bonding Interface Thermal Resistance for High-Power LEDs Through Embedding Packaging Structure

Journal 2016 · IF 4.953 · 32(7): 5520-5526 · 发表于 2016 年 9 月 15 日
作者: Xiang Lei,Huai Zheng,Xing Guo,Zefeng Zhang,Jiading Wu,Chunlin Xu,Sheng Liu
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摘要

Thermal management is a key issue for high-power light-emitting diodes (LEDs). In this study, a novel packaging structure was proposed to reduce the die-bonding interface thermal resistance and provided a new idea for LED heat-dissipation. The LED chip was embedded into a square groove at the lead-frame substrate. The gap between the edges of the LED chip and square groove was filled with boron nitride/silicone composite. So the heat generated from the chip could be dissipated from the side surfaces to the substrate. The experimental results show that the heat-dissipation ability of LEDs has been significantly improved by the new embedding packaging structure. The die-bonding interface thermal resistance can be reduced by more than 20%. The junction temperature rise can be reduced by 14%. Due to the fully embedding of LED chip in the square groove, the light intensity distribution is slightly shrunk and the light output power is slightly reduced by about 8%.