Controllable growth of 2H-1 T′ MoS2/ReS2 heterostructures via chemical vapor deposition

Two-dimensional (2D) 2H-1 T′ heterojunctions based on transition-metal dichalcogenides have attracted great attention due to their special interface structures and novel properties. Understanding the growth mechanism and the interface structures is essential for their controllable growth. In this work, we successfully synthesize lateral and vertical MoS 2 /ReS 2 heterojunctions by using a two-step chemical vapor deposition (CVD) method, and deeply explore the evolution of the structure. It is found that the growth mode of heterojunction undergoes a transition from lateral epitaxy to vertical stacking under a high Re/S ratio during the growth. Furthermore, the interface structure is greatly determined by the edge shape of MoS 2 core. Two kinds of structures, with the b-axis of 1 T′ ReS 2 shell parallel to the (1   0   0) and (0   1   0) plane of MoS 2 core respectively, are observed. Meanwhile, by comparing with MoS 2 monolayer, MoS 2 /ReS 2 heterostructures possess a reduced emission intensity due to the carrier transfer. This work provides a robust and controllable strategy for the synthesis of heterostructures with different phase structures.