Growth of monolayer MoS2 films in a quasi-closed crucible encapsulated substrates by chemical vapor deposition

Monolayer molybdenum disulfide (m-MoS 2 ) has attracted significant interest due to its unique electronic and optical properties. Herein, we report the successful fabrication of high quality and continuous m-MoS 2 films in a quasi-closed crucible encapsulated substrates via a three-zone chemical vapor deposition (CVD) system. Quasi-closed crucible lowers the concentration of precursors around substrates and makes the sulfurization rate gentle, which is beneficial for invariable m-MoS 2 growth. Characterization results indicate that as-grown m-MoS 2 films are of high crystallinity and high quality comparable to the exfoliated MoS 2 . This approach is also adapted to the growth of other transition metal dichalcogenides.