Performance Enhancement of Field-Effect Transistors Based on In₂O₃ Nanofiber Networks by Plasma Treatment

In this report, In₂O₃ nanofiber networks (NFNs) were prepared by electrospinning and the field-effect transistors (FETs) based on In₂O₃ NFNs were fabricated. The effects of plasma treatment on the electrical performance of the FETs based on In₂O₃ NFNs were investigated. It is found that the oxygen vacancy in In₂O₃ NFNs can be tuned by the plasma treatment and the electrical performance of the FETs can be tuned accordingly. In this work, X-ray photoelectron spectroscopy was employed to investigate the chemical stoichiometry in In₂O₃ nanofibers with respect to plasma treatment conditions. The electrical performances of the FETs based on In₂O₃ NFNs treated by various plasma treatment conditions were systematically studied. It is found that, compared to those without O₂ plasma treatment, the FET based on In₂O₃ NFNs treated by O₂ plasma at 120 W for 5 min exhibits high electrical performance, including the variation of threshold voltage from -22.34 to 7.81 V and current on/off ratio from ~10³ to ~10⁷ and a μ_FE of 1.51 cm²/Vs. This result demonstrates that moderate plasma treatment can be adopted to improve the electrical performance of the FETs based on metal oxide NFNs.