摘要
Recently, the cubic SnSe with multiple valleys and low thermal conductivity has become the focus of current research and receives extensive attention worldwide. However, the cubic SnSe is difficult to exist stably at normal temperature and pressure. In this work, the cubic rock-salt SnSe samples were successfully stabilized at room temperature by AgBiTe 2 alloying. Microstructure and thermoelectric properties of the Sn 1–2 x (AgBi) x Se 1–2 x Te 2 x ( x = 0, 0.10, 0.15, 0.20, 0.25, 0.30) were studied systematically. With the increase of AgBiTe 2 addition, the crystal structure of SnSe gradually transformed from orthorhombic to cubic phase. Due to the doping of heterogeneous atoms and the phase structural transformation, the carrier concentration and carrier mobility of Sn 1–2 x (AgBi) x Se 1–2 x Te 2 x were optimized, thus the electrical properties were significantly enhanced. An obviously enhanced zT max of 0.70 at 750 K and a zT ave of 0.29 (300–750 K) were achieved in Sn 0.50 (AgBi) 0.25 Se 0.50 Te 0.50 . In addition, the mechanical properties of Sn 1–2 x (AgBi) x Se 1–2 x Te 2 x were also strengthened. A higher Vickers hardness of ∼1.8 GPa was obtained in Sn 0.40 (AgBi) 0.30 Se 0.40 Te 0.60 .
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