摘要
The dual defect mediated Z-scheme MoS 2 /g-C 3 N 4 photocatalyst was fabricated via a simple ultrasonic dispersion and annealing method. The structural, optical and electronic property was systematically characterized. X-ray photoelectron spectroscopy (XPS) analysis demonstrated that the MoS 2 was anchored on the g-C 3 N 4 through strong interface electrostatic interaction , which led to the formation of built-in electric field at the contact interface. The optimized MoS 2 /g-C 3 N 4 heterojunction achieved a superior photoefficiency towards bisphenol A (BPA) degradation and exhibited the reaction rate normalized to specific surface area of 3.22 × 10 −4 g·min −1 m −2 , approximately 10.0 and 6.7 times larger than these of g-C 3 N 4 and MoS 2 , respectively. The origin of the enhanced photocatalytic activity of MoS 2 /g-C 3 N 4 was attributed to the formation of intimate Z-scheme surface heterostructure between MoS 2 and g-C 3 N 4 , thus improved the light-harvesting ability, facilitated fast charge separation and created more active sites. The impact of anionic towards degradation efficiency was investigated. The degradation activity and degree of BPA were investigated by three-dimensional excitation-emission matrix (3D EEM) fluorescence technique. The Z-scheme charge transfer mechanism and the significant contribution of holes (h + ) and superoxide radicals ( O 2 − ) were demonstrated by electron spinning resonance (EPR), radical scavenger experiment and spectral quantification technology. This work could offer a new protocol for the design of highly efficient heterostructure photocatalysts towards environmental remediation.
危险品化学品经营许可证(带存储)