Synthesis of High-Purity Ti3SiC2 by Microwave Sintering

High-purity ternary laminated compound Ti 3 SiC 2 was successfully synthesized by a microwave heating method in the flowing argon for the first time. The mixtures of titanium, silicon, and graphitic carbon (C gc ) or activated carbon (C ac ) with different molar ratios were used to investigate the reaction mechanisms. It was confirmed that Ti 3 SiC 2 with high purity of 98 vol.% was achieved without the aids of Al. The optimum experimental parameters were determined as Ti/Si/C gc having the molar ratio of 3/2.2/2, first holding at 1480°C for 30 min, and subsequent dwelling at 1300°C for 60 min.