摘要
In this paper, MoS 2 /PbI 2 heterostructures were synthesized via a two-step synthesis method using vapor deposition and direct water bath heating. Raman spectroscopy and Atomic Force Microscope were used to characterize the MoS 2 /PbI 2 heterostructures. The Kelvin probe force microscope was characterized the surface potential of MoS 2 /PbI 2 heterostructures. It has shown that the surface potential has undergone a significant change transfer in the interlayer between MoS 2 and PbI 2 , which means that at the interface charge transfer occurs and the electrons transfer from MoS 2 to PbI 2 . These results provide a theoretical basis for further understanding of the electrical properties of MoS 2 /PbI 2 heterostructures.
危险品化学品经营许可证(带存储)