Application of Sb3+-Doped Cs2ZnCl4 Single Crystals in Near-Infrared Imaging

Near-infrared emission has been widely used in night vision and smart devices due to their low thermal effects, non-invasion, and appropriate penetration. As a new generation of luminescent materials, metal halides are considered a promising next-generation near-infrared light source. Zinc-based halides have attracted much attention due to their excellent stabilities, low toxicity, and wide band gaps. However, most zinc-based halides composed of non-optically active [ZnX4]2- units exhibit poor photoluminescence quantum yields (PLQYs). In this paper, Sb3+ ions were doped into Cs2ZnCl4 single crystals to regulate their luminescence properties and investigate corresponding emissive mechanisms. Sb3+-doped Cs2ZnCl4 single crystals exhibit efficient near-infrared emission, which is attributed to the self-trapped excitons emission of Sb3+. The prepared near-infrared LEDs based on Sb3+-doped Cs2ZnCl4 exhibit excellent near-infrared imaging performance, demonstrating the potential application of zinc-based halides in military night vision.