Broadband near-infrared emission in the NaInP2O7:Cr3+ phosphor for light-emitting-diode applications

Near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs) have attracted more and more attention for the applications in spectroscopic technology, promoting the demand of searching broad-band near-infrared phosphors. In this work, Cr 3+ -doped NaInP 2 O 7 phosphors with broadband NIR emission were synthesized via conventional high-temperature solid-state reaction method. The crystal, photoluminescence , and the performance of fabricated device were investigated in detail. The photoluminescence demonstrates this material exhibits an intense absorption in blue light region, matching well with the blue LED chip; while the emission spectra peaking at 870 nm covers 650–1150 nm region with a full width at half maximum (FWHM) of about 150 nm. The quantum yield (QY) and absorption efficiency was determined to be 28.2% and 49.82%, respectively, under 460 nm blue light excitation. Finally, a NIR pc-LED device was fabricated by using a commercial 455 nm blue LED combined with as-prepared NaInP 2 O 7 :Cr 3+ phosphor, which has an output power of 9.08 mW and photoelectronic conversion efficiency of 2.98% under a driving current of 100 mA, indicating that the as-prepared phosphors might have a good potential for application in NIR pc-LEDs.