Electrodeposition of CuInxGa1−xSe2 thin films via pulse technique from Ionic liquid containing n-propyl alcohol

Stoichiometric Cu 1.00 In 0.51 Ga 0.1 Se 2.04 (CIGS) thin films containing Cu(II), In(III), Ga(III) and Se(IV) are obtained for the first time in ionic liquid/n-propyl alcohol mixtures with controlled pulse electrodeposition parameters at 323   K. The effects of deposition current density, deposition time , frequency and duty cycle are studied in detail. The band gap of obtained CuIn x Ga 1− x Se 2 (CIGS) thin film are approximately 1.35   eV, as measured using UV–visible absorption spectra . The interplanar spacing and average Hall coefficient of the CIGS thin films are approximately 3.315   Å and 1.011×10 −1   cm 3 /C, respectively.