High-energy storage performance achieved in PbZrO3 thin films via Li+ doping and low-temperature annealing

s The lead zirconate (PZO) anti-ferroelectric thin film capacitors, known for their high power density and rapid discharge speed, have garnered significant attention for applications in energy storage. Efficient strategies to enhance energy storage performance include doping and low-temperature annealing. PZO-based films, grown on Pt/Ti/SiO 2 /Si using the sol-gel method, undergo modification through Li + doping to enhance polarization and lowering the annealing temperature to improve the breakdown electric field. The results indicate that Pb(Zr 0.92 Li 0.08 )O 3 films, annealed at 550°C, exhibit a high energy storage density of 29.53 J/cm 3 , an efficiency of 82.38 % in an electric field of 4000 kV/cm, and maintain excellent electrical properties through 10 7 charge-discharge cycles. This study demonstrates that doping and low-temperature annealing enhance the energy storage properties of Pb(Zr 0.92 Li 0.08 )O 3 -based films, rendering them highly promising for application in dielectric capacitors.