Effect of Deposition Potential on Preparation and Corrosion Resistance of SiO2 Film on Copper

The silanization of metal surface is a new and environmental anti-corrosion technology. SiO 2 film has been prepared on copper by an electrochemically-assisted deposition technology using tetraethoxysilane as a silane reagent in this research. The effect of deposition potential on structure and performance of SiO 2 film were also studied. The results indicate that SiO 2 is the main component of the deposited films. As the deposition potential changes from -1.0V to -1.5V, the value of SiO 2 content, film deposition rate and film thickness all increase first and then decrease. When the deposition potential is -1.4V, the deposition rate of SiO 2 film is the fastest (1.13×10 -5 g·cm -2 ·s -1 ) and this film is also the thickest (69.1 μm). Moreover, the prepared SiO 2 film has obvious barrier property and can improve the corrosion resistance of the Cu substrate.