摘要
The photoelectrocatalytic water splitting of molybdenum disulfide is hindered by the intrinsic large electrical resistance among adjacent layers, serious photo-generated carrier recombination and limited utilization of visible light . Herein, we construct MoS 2 /MoO 2 heterostructures via a facile in situ hydrothermal route, in which a Schottky junction is established between the MoS 2 semiconductor and metallic MoO 2 . As a result, the photoelectrochemical current density of MoS 2 /MoO 2 is enhanced about 1.6 times than that of pure MoS 2 , achieving −10.3 mA cm −2 at −1.8 V vs. SCE, which can be attributed to the reduced electron transfer resistance, enlarged photo-generated carrier separation efficiency and enhanced light absorption due to the presence of metallic MoO 2 .
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