A novel Sm2+ doped broadband far-red BaAl2Si3O4N4: Sm2+ phosphor for plant lighting applications

Far-red light plays a crucial role in the field of plant lighting. Herein, a novel far-red phosphor BaAl 2 Si 3 O 4 N 4 : Sm 2+ , which can be effectively excited by blue light, was successfully prepared by high-temperature solid-state reaction. The PL spectrum show a broadband emission range from 600 nm to 950 nm (FWHM = 120 nm), which is well matched with the absorption of P FR in plant. In BaAl 2 Si 3 O 4 N 4 : Sm 2+ , the Ba 2+ are coordinated with three N and six O atoms. When the rare earth ion of Sm 2+ was doped into the host lattice , Ba 2+ was partially replaced by Sm 2+ . The low temperature PL spectra at 8–80 K were studied in detail. It was found that the PL spectra at low temperature were composed of some sharp lines and broadband superposition, which corresponding to the 5 D 0 - 7 F J (J = 0–4) energy level transition of Sm 2+ . It is shown that the broadband emission of the phosphor was caused by the broadening of the 4f 5 5 d 1 energy level due to the strong crystal field effect. The thermal stability analysis showed that the luminescence intensity of BaAl 2 Si 3 O 4 N 4 : Sm 2+ at 150 °C still maintains 62.7 % of that at room temperature , showing excellent thermal stability. All results indicate that BaAl 2 Si 3 O 4 N 4 : Sm 2+ phosphor has important potential applications in the field of plant lighting.