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Stable p- and n-type doping of few-layer graphene/graphite

Journal 2013 · IF 5.868 · 发表于 2013 年 2 月 19 日
作者: Xiuqing Meng,Sefaattin Tongay,Jun Kang,Zhanghui Chen,Fengmin Wu,Shu-Shen Li,Jian-Bai Xia,Jingbo Li,Junqiao Wu
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摘要

ZnMg and NbCl 5 were intercalated in graphite and the presence of such molecules between the graphene sheets results in n- and p-type doping, respectively. The doping effect is confirmed by Hall and Raman measurements and the intercalation process is monitored by scanning tunneling microscopy . After intercalation the carrier concentration increase almost an order of magnitude and reaches values as high as 10 19 and 10 18   cm −3 for p- and n-type doping, respectively. For higher intercalation times, the intercalated graphite turns back to be as ordered as pristine one as evidenced by the reduction in the D peak in Raman measurements. Intercalation compounds show remarkable stability allowing us to permanently tune the physical properties of few-layer graphite. Our study has provided a new route to produce stable and functional graphite intercalation compounds and the results can be applied to other graphitic structures such as few-layer graphene on SiC.