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Highly Efficient Light Emitting Diodes Based on In Situ Fabricated FAPbI3 Nanocrystals: Solvent Effects of On-Chip Crystallization

Journal 2019 · IF 7.125 · 7(20): 1900774 · 发表于 2019 年 7 月 28 日
作者: Xin Zhang,Dengbao Han,Chenhui Wang,Imran Muhammad,Feng Zhang,Ali Shmshad,Xulan Xue,Wenyu Ji,Shuai Chang,Haizheng Zhong
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摘要

The in situ fabricated perovskite nanocrystals (PNCs) obtained through spin-coating a precursor solution are suitable candidates to achieve efficient perovskite light emitting diodes (PeLEDs). In this work, the solvent effects of on-chip crystallization are investigated by correlating the nucleation and growth process of in situ fabricated formamidinium lead iodide (FAPbI 3 ) nanocrystals with their optical and electronic properties. The FAPbI 3 nanocrystals obtained from a precursor solution in γ-butyrolactone (GBL) are smaller than those obtained from N , N -dimethylformamide and dimethyl sulfoxide, and the relatively weak coordination between GBL and the precursor molecules enables reduced defect states in the resulted PNCs with enhanced photoluminescence properties. A modified LaMer model is proposed to describe the solvent effects in the on-chip crystallization process. Based on these understandings, red emissive FA 0.87 Cs 0.13 PbI 3 nanocrystal films with absolute photoluminescence quantum yields up to 70% are realized. Finally, an efficient PeLED with maximum luminance of 218 cd m −2 and peak external quantum efficiency of 15.8% is achieved with good reproducibility.