摘要
The severe non-radiative recombination loss caused by SnO 2 /perovskite interface defects greatly hinders the further improvement of the performance and stability of flexible perovskite solar cells (PSCs). Herein, a series of halides KM (M = F, Cl, Br, I) were inserted as interface layers to modulate the SnO 2 /perovskite interface. Both experimental and theoretical calculation demonstrated that F − exhibited stronger interface coupling effect between the SnO 2 and perovskite than other halide ions (Cl − , Br − , I − ). The F − had unique effects in effectively depressing SnO 2 /perovskite interface defects ascribed to the simultaneous formation of Sn F bonds and hydrogen bonds , resulting in reduced non-radiative recombination and improved interfacial contact. In consequence, the champion KF-modified flexible and rigid PSCs delivered outstanding PCE of 18.16 % and 21.36 %, accompanied by the enhanced V OC of 1.14 V and 1.16 V, respectively. Meanwhile, the stability of flexible PSCs was significantly ameliorated after KF modification, and about 84 % of the original efficiency could be retained even after 3000 bending cycles. This work provides a facile and efficient strategy for interface modulation to achieve high-performance and stable flexible PSCs.
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