Boosting thermoelectric performance in Cu3SbS4-based compounds through incorporating SiC nanoparticles

Cu 3 SbS 4 -based compounds have received significant attention as a promising alternative for p-type thermoelectric materials due to their low-cost, earth abundant resource, and eco-friendly characteristics. However, the practical applications for waste heat utilization and solid-state refrigeration are still limited because of their low conversion efficiency. Herein, a high thermoelectric performance was realized in SiC nanoparticles-dispersed Cu 3 Sb 0.85 Bi 0.06 Sn 0.05 S 4 composites. SiC nanoparticles additives generate the interface potential barriers and increased energy-dependent carrier scattering, leading to enhanced power factor. Moreover, SiC nanoparticles significantly reduces the lattice thermal conductivity due to enhanced phonon scattering. As a result, a high ZT value of 0.61 is achieved at 573 K for the CASBT/0.05 wt % SiC sample, which is enhanced by 39% compared with the pristine sample. Meanwhile, an outstanding average ZT of 0.31 is obtained among the investigated temperature range. This work provides a feasible guidance for designing advanced thermoelectric materials.