Electrodeposition of CuInxGa1−xSe2 from a 1-butyl-3-methylimidazolium trifluoromethanesulfonate ionic liquid

BMIm-OTF (1-Butyl-3-methylimidazolium trifluoromethanesulfonate) ionic liquid was used for the first time to prepare Cu 1.00 In 0.83 Ga 0.23 Se 1.64 thin films . The standard CIGS sample was calibrated using its inductively coupled plasma optical emission. The morphological properties were detected using scanning electron microscopy . The band gap of the CIGS thin film was approximately 1.55   eV, as measured using UV–visible absorption spectra . The carrier concentration and average Hall coefficient of the CIGS thin films were 2.741×10 20   cm −3 and 2.277×10 −2   cm 3 /C, respectively.